FZT849 sot223 npn silicon planar high current (high performance) transistor issue 3 - january 1996 features * extremely low equivalent on-resistance; r ce(sat) 36m w at 5a * 7 amp continuous collector current (20 amp peak) * very low saturation voltages * excellent gain charateristics specified upto 20 amp * p tot =3 watts partmarking details - FZT849 complementary type - fzt949 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 6v peak pulse current i cm 20 a continuous collector current i c 7a power dissipation at t amb =25c p tot 3w operating and storage temperature range t j :t stg -55 to +150 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 4 inch square minimum FZT849 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 80 120 v i c =100 m a collector-emitter breakdown voltage v (br)cer 80 120 v i c =1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo 30 40 v i c =10ma* emitter-base breakdown voltage v (br)ebo 68 v i e =100 m a collector cut-off current i cbo 50 1 na m a v cb =70v v cb =70v, t amb =100c collector cut-off current i cer r 1k w 50 1 na m a v cb =70v v cb =70v, t amb =100c emitter cut-off current i ebo 10 na v eb =6v collector-emitter saturation voltage v ce(sat) 35 67 168 50 110 215 350 mv mv mv mv i c =0.5a, i b =20ma* i c =1a, i b =20ma* i c =2a, i b =20ma* i c =6.5a, i b =300ma* base-emitter saturation voltage v be(sat) 1.2 v i c =6.5a, i b =300ma base-emitter turn-on voltage v be(on) 1.13 v i c =6.5a, v ce =1v* static forward current transfer ratio h fe 100 100 100 30 200 200 150 65 300 i c =10ma, v ce =1v i c =1a, v ce =1v* i c =7a, v ce =1v* i c =20a, v ce =2v* transition frequency f t 100 mhz i c =100ma, v ce =10v f=50mhz output capacitance c obo 75 pf v cb =10v, f=1mhz* switching times t on t off 45 630 ns ns i c =1a, i b1 =100ma i b2 =100ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device c c e b 3 - 258 3 - 257
FZT849 sot223 npn silicon planar high current (high performance) transistor issue 3 - january 1996 features * extremely low equivalent on-resistance; r ce(sat) 36m w at 5a * 7 amp continuous collector current (20 amp peak) * very low saturation voltages * excellent gain charateristics specified upto 20 amp * p tot =3 watts partmarking details - FZT849 complementary type - fzt949 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 6v peak pulse current i cm 20 a continuous collector current i c 7a power dissipation at t amb =25c p tot 3w operating and storage temperature range t j :t stg -55 to +150 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 4 inch square minimum FZT849 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 80 120 v i c =100 m a collector-emitter breakdown voltage v (br)cer 80 120 v i c =1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo 30 40 v i c =10ma* emitter-base breakdown voltage v (br)ebo 68 v i e =100 m a collector cut-off current i cbo 50 1 na m a v cb =70v v cb =70v, t amb =100c collector cut-off current i cer r 1k w 50 1 na m a v cb =70v v cb =70v, t amb =100c emitter cut-off current i ebo 10 na v eb =6v collector-emitter saturation voltage v ce(sat) 35 67 168 50 110 215 350 mv mv mv mv i c =0.5a, i b =20ma* i c =1a, i b =20ma* i c =2a, i b =20ma* i c =6.5a, i b =300ma* base-emitter saturation voltage v be(sat) 1.2 v i c =6.5a, i b =300ma base-emitter turn-on voltage v be(on) 1.13 v i c =6.5a, v ce =1v* static forward current transfer ratio h fe 100 100 100 30 200 200 150 65 300 i c =10ma, v ce =1v i c =1a, v ce =1v* i c =7a, v ce =1v* i c =20a, v ce =2v* transition frequency f t 100 mhz i c =100ma, v ce =10v f=50mhz output capacitance c obo 75 pf v cb =10v, f=1mhz* switching times t on t off 45 630 ns ns i c =1a, i b1 =100ma i b2 =100ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device c c e b 3 - 258 3 - 257
0.01 0.1 1 10 0.4 0 0.8 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol ts ) i c - collector current (amps) v be(sat) v i c i - c ol l ect or c ur r en t (a m ps ) v ce - collector voltage (volts) safe operating area 0.1 100 110 0.1 1 10 100 single pulse test at t amb =25c 0.01 0.1 1 10 1.0 0.5 2.0 1.5 i c - collector current (amps) v be(on) v i c v - (vol ts ) v ce =1v v - (vo l t s) i c /i b =10 0.6 0.2 0.01 0.1 1 10 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 i c - collector current (amps) h fe v i c h - n o rm al i sed ga i n 300 200 100 h - typical gain d.c. 1s 100ms 10ms 1.0ms 0.1ms v ce =5v 100 v ce =1v 100 0.001 i c /i b =50 0.01 0.1 1 10 1.0 0.5 2.0 1.5 100 0.001 i c /i b =50 i c /i b =10 100 FZT849 3 - 259
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